Structure and method of forming metal interconnect structures in ultra low-k dielectrics

ABSTRACT

A metal interconnect structure in ultra low-k dielectrics is described having a capped interconnect layer; an interconnect feature with a contact via and a contact line formed in a dielectric layer, where the via is partially embedded into the interconnect layer; and a thin film formed on the dielectric layer and separating the dielectric layer from the contact line. A method of fabricating the interconnect structure is also described and includes forming a first dielectric on a capped interconnect element; forming a thin film over the first dielectric; forming a second dielectric on the thin film; forming a via opening on the second dielectric, the thin film and extending into the first dielectric; forming a line trench on a portion of the second dielectric; and filling the via opening and the line trench with a conductive material for forming a contact via and a contact line, where the contact via is partially embedded in the interconnect element.

BACKGROUND OF THE INVENTION

1. Technical Field

The present disclosure relates generally to interconnect structuresformed in semiconductor devices. In particular, the present disclosurerelates to a structure and methods of forming metal interconnectstructures in porous ultra low-k dielectric.

2. Description of Related Art

Integrated circuit chips typically include two or more levels ofconductive lines which are vertically spaced apart and separated byintermediate insulating layers.

Interconnections are formed between the levels of conductive lines inthe chip for providing high wiring density and good thermal performance.The interconnections are formed by means of lines and vias which areetched through the insulating layers separating the levels. The linesand vias are then filled with a conductive material or metal (e.g.Copper) to form interconnect elements (i.e. via studs).

One preferred method of making interconnect wiring networks is thedamascene process. A typical damascene process for producing amultilevel structure would include: a blanket deposition of a dielectricmaterial; pattering of the dielectric material to form openings;deposition of a conductive material onto the substrate in sufficientthickness to fill the openings; and removal of excessive conductivematerial from the substrate surface using a chemical reactant-basedprocess, mechanical methods, or combined chemical-mechanical polishingtechniques. A typical interconnect element includes metal vias runningperpendicular to the semiconductor substrate and metal lines runningparallel to the semiconductor substrate. This process results inmultiple levels of conductor wiring interconnection patterns, havingindividual levels connected by via studs and operating to distributesignals among the various circuits on the chip. Traditionally, thedielectric material is made from an inorganic glass like silicon dioxide(SiO₂) or a fluorinated silica glass (FSG) film deposited by plasmaenhanced chemical vapor deposition (PECVD).

A dual damascene (DD) process is another well known method of makinginterconnect wiring networks. In the standard DD process, the wiringinterconnect network consists of two types of features: line featuresthat traverse a certain distance across the chip, and via features whichconnect together lines in different levels of interconnects in amultilevel stack. Because two interconnect features are simultaneouslydefined to form a conductor inlaid within an insulator by a singlepolish step, this process is referred to as dual damascene process.

With the progress in the transistor device technology leading to thepresent ultra large scale integration, the overall speed of operation ofthese advanced chips are beginning to be limited by the signalpropagation delay in the interconnection wires between the individualdevices on the chips. The signal propagation delay in the interconnectstructures is dependent on the resistance of the interconnect wires andthe overall capacitance of the interconnect scheme in which the wiresare embedded. The current focus in the microelectronics industry inbuilding the multilayered interconnect structures on chips, is to reducethe capacitance by the use of lower dielectric constant (k) insulators,by introducing porosity in these insulators. However, the reliability ofmetal interconnects in porous ultra low-k dielectrics is a criticalconcern. In particular, the electromigration lifetime of wide-lineinterconnects is poor due to a lack of a liner contact between thelanding via and the liner in the underlying line. Since the porousdielectric is prone to severe erosion during etch-back step needed forvia embedment within the underlying line, localized “fangs” or deep andsharp trenches are formed at the bottom of the line. Because of thesevere topography, these fangs are not appropriately covered with theliner. As a result, in view of a voltage bias, the metal can readilyleak out through the exposed area causing time-dependent dielectricbreakdown (TDDB) leakage failure as well as time-zero leakage. Atpresent, there are no known solutions to this problem.

Accordingly, a novel method of interconnect fabrication is proposed formaking a reliable metal interconnect in porous ultra low-k dielectricthat would address the aforementioned challenges.

SUMMARY OF THE INVENTION

The present disclosure is directed to a structure and methods of forminginterconnect structures in ultra low-k dielectrics. In one embodiment,an interconnect structure is described. The structure includes a cappedinterconnect layer; a dielectric layer having at least one interconnectfeature, the interconnect feature having a contact via and a contactline, where the contact via is partially embedded into a portion of theinterconnect line in the level below; and a thin layer formed on thedielectric layer, the thin layer separating the dielectric layer fromthe contact line. The interconnect layer and the interconnect featureincludes a metal selected from a group consisting of Cu, Al, W andalloys thereof. In one particular embodiment, the interconnect featureincludes a Cu-containing conductive material and the dielectric layer isan ultra low-k dielectric layer. In one embodiment, the thin layer is ametallic layer, where the metallic layer is selected from the groupconsisting of TaN, Ta, Co and W, Ti and TiN. In another embodiment, thethin layer is a low-k dielectric material. In yet another embodiment,the thin layer is SixNy, SiC, SiCxNyHz or similar dielectric material.

In another embodiment, an interconnect structure having an interconnectelement formed on a first insulating layer and having a capping layer; asecond insulating layer formed on the capping layer, where the secondinsulating layer includes at least one interconnect feature having ametal via and a metal line, where a the metal via is perpendicular tothe interconnect element and is partially embedded into a portion of theinterconnect element, and where the metal line is parallel to theinterconnect element; and a thin layer formed over the second insulatinglayer, the thin layer separating the second insulating layer from themetal line. In this particular embodiment, an upper surface of theinterconnect element is substantially coplanar with a surface of thefirst insulating layer. In addition, the second insulating layercontains a dielectric material, where the dielectric material is anultra low-k dielectric. The interconnect element includes a conductivematerial, where the conductive material is selected from a groupconsisting of Cu, Al, W and alloys thereof. In one particular embodimentthe conductive material is Cu. The thin layer is a metallic layer, wherethe metallic layer is selected from the group consisting of TaN, Ta, Coand W, Ti and TiN. In another embodiment, the thin layer is a low-kdielectric material. In yet another embodiment, the thin layer is SixNy,SiC, SiCxNyHz or similar dielectric material.

In yet another embodiment, an interconnect structure is described havingan interconnect element having a metal and formed on a first dielectriclayer; a capping layer formed on the interconnect element; an ultralow-k dielectric layer formed on the capping layer, the ultra low-kdielectric layer having at least one interconnect feature, where theinterconnect feature includes a first portion parallel to the dielectriclayer and a second portion perpendicular to the dielectric layer, wherethe second portion is substantially embedded in a portion of theinterconnect element; and a thin layer formed on a surface of the firstportion of the interconnect feature. In one embodiment, the firstportion is a conductive via and the second portion is a conductive vialine. Moreover, the thin layer is a metallic layer, where the metalliclayer is selected from the group consisting of TaN, Ta, Co and W, Ti andTiN. In another embodiment, the thin layer is a low-k dielectricmaterial. In yet another embodiment, the thin layer is SixNy.

In yet another embodiment, a method of fabricating an interconnectstructure is described. The method includes forming a cappedinterconnect element on an insulating layer;

forming a first dielectric layer on the capped interconnect element;forming a thin barrier layer over the first dielectric layer; forming asecond dielectric layer on the thin barrier layer; forming a via openingon the second dielectric layer and the thin barrier layer; forming aline trench on a portion of the second dielectric layer, where the viaopening extends into a portion of the first dielectric layer; andfilling the via opening and the line trench with a conductive materialfor forming a contact via and a contact line, where a portion of thecontact via is partially embedded in a portion of the interconnectelement and where the thin barrier layer separates the first dielectricfrom the contact line. The first dielectric layer and the seconddielectric layer are ultra low-k dielectrics. The interconnect elementincludes a material selected from a group consisting of Cu, Al, W andalloys thereof. In one embodiment, the conductive material is Cu and thethin barrier layer is a metallic layer, where the metallic layer isselected from the group consisting of TaN, Ta, Co and W, Ti and TiN. Inanother embodiment, the thin barrier layer is a low-k dielectricmaterial. In yet another embodiment, the thin barrier layer is SixNy,SiC, SiCxNyHz or similar dielectric material.

In yet another embodiment, a method of forming an interconnect structureis described. The method includes forming a first ultra low-k dielectricof via height thickness on top of an underlying interconnect layer;forming an ultra thin film on the first ultra low-k dielectric layer;forming a second ultra low-k dielectric of line level thickness on theultra thin film; etching a via through the second ultra low-kdielectric, the ultra thin film and partially through the first ultralow-k dielectric; etching a line trench in a portion of the second ultralow-k dielectric, where the via is substantially etched through theinterconnect layer; and depositing a metal for defining an interconnectlevel. The interconnect layer includes a Cu containing material and theultra thin film is a metallic layer, where the metallic layer isselected from the group consisting of TaN, Ta, Co and W, Ti and TiN. Inone particular embodiment, the ultra ultra thin film is a low-kdielectric material. In another embodiment, the ultra thin film isSixNy, SiC, SiCxNyHz or similar dielectric material. The interconnectlevel includes a contact via and a contact line, where the contact viais partially embedded in a portion of the interconnect layer and wherethe ultra thin firm is formed between a surface of the contact line andthe first ultra low-k dielectric.

Other features of the presently disclosed structure and method of makingreliable metal interconnect structures in ultra low-k dielectrics willbecome apparent from the following detailed description taken inconjunction with the accompanying drawing, which illustrate, by way ofexample, the presently disclosed structure and method.

BRIEF DESCRIPTION OF THE DRAWINGS

The features of the presently disclosed structure and method of formingmetal interconnect structures in ultra low-k dielectrics will bedescribed hereinbelow with references to the figures, wherein:

FIG. 1 illustrates a cross-sectional view of a prior art metalinterconnect structure;

FIGS. 2-8 illustrate simplified cross-sectional views of progressivestages of a method of forming interconnect structures, in accordancewith one embodiment of the present disclosure; and

FIG. 9 is an exemplary flow diagram illustrating a method of forming aninterconnect structure, in accordance with one embodiment of the presentdisclosure.

DETAILED DESCRIPTION

In the following description, numerous specific details are set forth,such as particular structures, components, materials, dimensions,processing steps and techniques, in order to provide a thoroughunderstanding of the present disclosure. However, it will be appreciatedby one skilled in the art that the invention may be practiced withoutthese specific details. In other instances, well-known structures orprocessing steps have not been described in detail to avoid obscuringthe invention. Thus, the materials and dimensions described herein areemployed to illustrate the invention in one application and should notbe construed as limiting.

Referring now to the drawing figures, wherein like references numeralsidentify identical or corresponding elements, an embodiment of thepresently disclosed structure and method of forming metal interconnectstructures in ultra low-k dielectrics, will be disclosed in detail. Inparticular, a new interconnect process is described, whereby a thinmetallic or dielectric layer is incorporated underneath the line trenchprior to the liner deposition. The proposed thin metallic or dielectriclayer will eliminate any trench erosion, “fangs” or deep localizedtrenches formation at the porous dielectric during the etch-back. As aresult, an appropriate degree of via embedment in the underlying linecan be achieved without any penalty for the line erosion and fangformation. Thus, a substantial improvement of the yield and/orreliability improvements such as via chain and line maze yield and metalline electromigration life time enhancement are achieved. In addition,this process also provides an additional benefit on short yield and TDDBreliability since there is no metal residue between metal lines.

With initial reference to FIG. 1, a prior art interconnect structureformed on a low-k dielectric is described and is designated generally asinterconnect structure 10. Interconnect structure 10 includes generallya metal (e.g. Cu) line 12 formed on a first dielectric layer (not shown)and an interconnect feature having a metal via feature 14 and a linemetal feature 16 formed on an ultra low-k dielectric layer 18. A barrierliner 20 is deposited prior to the deposition of the metal. Since theporous dielectric 18 is prone to rather severe erosion during etch-back,localized “fangs” 22 (i.e. deep and sharp trenches) are formed at abottom surface of line metal feature 16. Because of the severetopography, fangs 22 cannot be covered properly by liner 20. As aresult, the presence of a voltage bias, the metal can readily leak outthrough the exposed area causing time-dependent dielectric breakdown(TDDB) leakage failure.

FIGS. 2-8 illustrate a novel structure and methods of forming metalinterconnect structures in ultra low-k dielectrics. In particular, thesefigures illustrate new and improved interconnect structures formed in anultra low-k dielectric having a thin barrier layer and a method offorming the interconnect structures. In this novel proposed process, viacan be substantially (i.e. adequately) embedded in the line underneathresulting in enhancement of electromigration reliability ofinterconnects in porous and soft Ultra Low-k dielectric. In addition,the original dielectric interface created during CMP is removed by ablanket reactive ion etch (RIE) process and then filled with a freshultra low-k dielectric layer. The incidence of debris is significantlyreduced, since a minimal degree of CMP is needed to planarize thislayer, thus having a significant improvement in TDDB reliability andtime-zero leakage yield. In one embodiment, the interconnect structureincludes a patterned dielectric material and at least one metalinterconnect, such as, for example, a Cu-containing conductive material,having an upper surface embedded within the dielectric material; acapping layer separating the patterned dielectric material from themetal. The interconnect structure further includes an ultra low-kdielectric formed over the capping layer and a thin liner formed overthe ultra low-k dielectric. At least one interconnect feature is thenformed over the thin liner and the ultra low-k dielectric. The at leastone interconnect feature includes a metal via feature and a metal linefeature. In one embodiment, the metal via feature is perpendicular tothe ultra low-k dielectric and is partially embedded into the metalinterconnect. In addition, the thin liner is formed between a surface ofthe metal line feature and a surface of the ultra low-k dielectric. Inone particular embodiment, the metal feature is a Cu-containingconductive material having uniform impurity. In addition, theCu-containing conductive material includes Sulfur having impurity lessthan about 100 pp, Carbon having impurity less than about 10 ppm andChlorine having impurity less than about 10 ppm.

With particular reference to FIG. 2, a structure 100 is illustratedhaving an interconnect element having a metal line 102 formed on adielectric layer 103. A dielectric capping layer 104 is provided overthe metal line 102 and dielectric layer 103. In one embodiment,dielectric capping layer 104 includes a thickness ranging from about 15nm to about 55 nm. A first, insulating layer 106 of thickness equal tothe via height is disposed on an upper surface of dielectric cappinglayer 104. Next, a thin layer 108 is deposited over first insulatinglayer 106. Thin layer 108 will serve as a protective layer under theline trench during the etch-back process, in a manner described in moredetails hereinbelow. A second insulating layer 110 equivalent to thethickness of a line trench is deposited followed by a conventionalbuffered oxide layer 112 as process of record (POR).

With reference to FIG. 3, interconnect opening 114 is etched throughsecond insulating layer 110 through thin layer 108, and partiallythrough first insulating layer 106 by conventional patterningtechniques. In particular, interconnect opening 114 is etched and formedusing well known etching methods, such as, for example, reactive ionetch (RIE). Interconnect opening 114 is typically referred to as acontact via feature.

In one embodiment, first insulating layer 106 is an ultra low-kinterlayer dielectric having a dielectric constant, k, of 2.7 or lessand a thickness ranging from about 100 nm to about 500 nm. Firstinsulating layer 106 may include any interlevel or intraleveldielectric, and is porous. Suitable materials include, but are notlimited to, organic polymers, low k PECVD films containing Si, C, O andH and spin on organo-silicate glasses which have k values in the 2.7 to2.0 range or lower. It is understood, however, that other materialshaving ultra low-k dielectric constant and thickness may be employed.Second insulating layer 110 may include the same or different dielectricmaterial as that of first insulating layer 106. Moreover, the processingtechniques and thickness ranges described hereinabove with respect tofirst insulating layer 106 are also applicable to second insulatinglayer 110. This disclosure shall refer to insulator layers 106 and 110as ultra low-k dielectrics.

Metal line 102 is formed using conventional deposition techniques. Metalline 102 includes a conductive metal and a highly resistive diffusionbarrier (not shown) to prevent the conductive metal from diffusing. Theconductive metal in metal line 102 may be selected from a materialincluding, for example, Cu, Al, W, their alloys, and any suitableconductive material.

Dielectric capping layer 104 is formed through conventional depositionprocesses, such as, for example, CVD, ALD, plasma enhanced chemicalvapor deposition (PECVD), etc. Dielectric capping layer 104 may includeany of several materials well known in the art, for example, Si3N4, SiC,SiO2, and SiC (N, H) (i.e., nitrogen or hydrogen doped silicon carbide),etc.

Thin layer 108 includes a thickness ranging from about 1 nm to about 100nm and thus there is minimal impact on the line resistance orcapacitance. Thin layer 108 may be selected from a material havingnegligible solubility in Cu, such as, for example, TaN, Ta, Co, W, Tiand TiN. Alternatively, thin layer 108 may be a low-k dielectricmaterial such as, for example, N-Blok and PECVD Oxide. Moreover,dielectric materials such as, for example, SixNy, SiC, SiCxNyHz orsimilar dielectric material, such as, NbloK, PECVD, Al2O3, FlowableOxide, TEOS, and Polyimide are also envisioned.

With reference to FIG. 4, a line trench 116 is formed by etching linetrench 116 through ultra low-k dielectric layer 110 using conventionaletching techniques. Thus a dual damascene trench and via structures 116and 114, respectively, is shown in the figure after the photoresist isstripped.

With continued reference to FIG. 4, using a blocking mask to protect thetrench of the metal line, the etching process is continued as POR toetch through the opening 114. The etching is continued to the lowermetal line 102. The etching is stopped after the embeddement of opening114 a into the metal line 102. Thus, interconnect opening 114 a ispartially embedded in a portion of metal line 102.

With reference to FIG. 5, a diffusion barrier liner 118 is depositedover the surface of the structure of FIG. 4 using conventionaldeposition techniques. The resulting recess is then filled with aconducting fill material 120 over the surface of the patternedstructure. Fill material 120 is most commonly accomplished byelectroplating of Cu although other methods such as chemical vapordeposition (CVD) and other materials such as Al or Au can also be used.In one embodiment, diffusion liner 118 includes a thickness ranging fromabout 1 nm to about 50 nm. In one particular embodiment, diffusion liner118 includes a noble metal liner selected from a material including Ru,Ir, Co, Pt, Rh, Ni, Pd, or any other suitable noble metal.Alternatively, a highly resistive diffusion liner 118 may be selectedfrom a material including Ta, TaN, TiN, Ru, Ru(Ta), Ru(TaN), W, WN, orany other barrier material.

With reference to FIG. 6, fill material 120 and diffusion liner 118 arethen chemical-mechanical polished (CMP) to be coplanar with the surfaceof the ultra low-k dielectric 110, thus defining the interconnectstructure 122.

With reference to FIG. 7, the structure of FIG. 6 is subjected to ablanket etch such as RIE for removing a portion of ultra low-kdielectric 110 and a portion of thin layer 108. A chemical etch processis also envisioned. It is noted that the metal in the interconnectstructure 122 will resist the RIE.

With reference to FIG. 8, a dielectric capping layer 124 is deposited toprotect the top surface of interconnect structure 122 and a layer of anultra low-k dielectric (not shown) is deposited for forming the nextlayer of interconnect structures.

With reference to FIGS. 9, in conjunction with FIGS. 2-8, a flow diagramof an exemplary method of forming metal interconnect structures inporous ultra low-k dielectrics, in accordance with the presentdisclosure, is illustrated. At step 150, an ultra low-k dielectric 106of via height thickness is deposited on top of an interconnect metalline 102 capped with layer 104. In accordance with the presentdisclosure, at step 152, a thin layer 108 in the order of 1 to 5 nm ofeither metallic film such as TaN, Ta, Co, W, Ti or TiN or dielectricfilm such as N-block or SixNy is deposited. Thin layer 108 will serve asa protective layer under the line trench during the etch-back processduring liner deposition. At step 154, a second layer of ultra low-kdielectric 110 equivalent to ultra low-k dielectric 106 is formed followby a conventional buffered oxide layer 112 as process of record (POR).At step 156, after deposition of the photoresist, a via 114 is etchedthrough ultra low-k dielectric 110, thin layer 108 and partially throughultra low-k dielectric 106. At step 158, line trench 116 is formed byetching metal line trenches through ultra low-k dielectric 110. At step160, using a blocking mask to protect trench 114, the etching process iscontinued as POR to etch through the via opening 114 and to the lowermetal line 102. The etching stops after the embeddement of via opening114 a into the lower metal line 102. At step 162, the current PORdiffusion liner 118 deposition and Cu (i.e. fill material) 120 platingis then carried out, followed by CMP to define the interconnect level122. At step 164, a blanket RIE/chemical etch process is carried out toremove the thin layer 108 between the lines. At step 166, next a layerof capping layer 124 and ultra low-k dielectric is deposited for formingthe next layer of interconnect structures at step 152.

It will be understood that numerous modifications and changes in formand detail may be made to the embodiments of the presently disclosedstructure and methods of forming metal interconnect structures in ultralow-k dielectrics. It is contemplated that numerous other configurationof the interconnect structure may be formed, and the material of thestructure and method may be selected from numerous materials other thanthose specifically disclosed. Therefore, the above description shouldnot be construed as limiting the disclosed structure and method, butmerely as exemplification of the various embodiments thereof. Thoseskilled in the art will envisioned numerous modifications within thescope of the present disclosure as defined by the claims appendedhereto. Having thus complied with the details and particularity requiredby the patent laws, what is claimed and desired protected is set forthin the appended claims.

1. An interconnect structure comprising: a capped interconnect layer; adielectric layer having at least one interconnect feature, saidinterconnect feature having a contact via and a contact line, whereinsaid contact via is partially embedded into a portion of saidinterconnect layer; and a thin layer formed on said dielectric layer,said thin layer separating said dielectric layer from said contact line.2. The interconnect structure of claim 1, wherein said interconnectlayer includes a metal selected from a group consisting of Cu, Al, W andalloys thereof.
 3. The interconnect structure of claim 1, wherein saiddielectric layer is an ultra low-k dielectric layer.
 4. The interconnectstructure of claim 1, wherein said at least one interconnect featureincludes a metal selected from a group consisting of Cu, Al, W andalloys thereof.
 5. The interconnect structure of claim 1, wherein saidat least one interconnect feature includes a Cu-containing conductivematerial.
 6. The interconnect structure of claim 1, wherein the thinlayer is a metallic layer used as etch stopper to prevent a localizeddeep trench defect formation in said contact line.
 7. The interconnectstructure of claim 6, wherein said metallic layer is selected from thegroup consisting of TaN, Ta, Co and W, Ti and TiN.
 8. The interconnectstructure of claim 1, wherein said thin layer is a low-k dielectricmaterial adapted as an etch stopper to prevent a localized deep trenchformation in said contact line.
 9. The interconnect structure of claim1, wherein said thin layer is selected from a group consisting of SixNy,SiCx, SiCxNyHz, NbloK, PECVD, Al2O3, Flowable Oxide, TEOS, andPolyimide.
 10. An interconnect structure comprising: an interconnectelement formed on a first insulating layer and having a capping layer; asecond insulating layer formed on said capping layer, wherein saidsecond insulating layer includes at least one interconnect featurehaving a metal via and a metal line, wherein a said metal via isperpendicular to said interconnect element and is partially embeddedinto a portion of said interconnect element, and wherein said metal lineis parallel to said interconnect element; and a thin layer formed oversaid second insulating layer, said thin layer separating said secondinsulating layer from said metal line.
 11. The interconnect structure ofclaim 10, wherein said second insulating layer contains a dielectricmaterial.
 12. The interconnect structure of claim 11, wherein saiddielectric material is an ultra low-k dielectric.
 13. The interconnectstructure of claim 10, wherein said interconnect element includes aconductive material.
 14. The interconnect structure of claim 13, whereinsaid conductive material is selected from a group consisting of Cu, Al,W and alloys thereof.
 15. The interconnect structure of claim 13,wherein said conductive material is Cu.
 16. The interconnect structureof claim 10, wherein an upper surface of said interconnect element issubstantially coplanar with a surface of said first insulating layer.17. The interconnect structure of claim 10, wherein the thin layer is ametallic layer.
 18. The interconnect structure of claim 17, wherein saidmetallic layer is selected from the group consisting of TaN, Ta, Co andW, Ti and TiN.
 19. The interconnect structure of claim 10, wherein saidthin layer is a low-k dielectric material.
 20. The interconnectstructure of claim 10, wherein said thin layer is selected from a groupconsisting of SixNy, SiCx, SiCxNyHz, NbloK, PECVD, Al2O3, FlowableOxide, TEOS, and Polyimide.
 21. An interconnect structure comprising: aninterconnect element having a metal and formed on a first dielectriclayer; a capping layer formed on said interconnect element; an ultralow-k dielectric layer formed on said capping layer, said ultra low-kdielectric layer having at least one interconnect feature, wherein saidinterconnect feature includes a first portion parallel to saiddielectric layer and a second portion perpendicular to said dielectriclayer, wherein said second portion is substantially embedded in aportion of said interconnect element; and a thin layer formed on asurface of said first portion of said interconnect feature.
 22. Theinterconnect structure of claim 21, wherein said second portion is aconductive via line.
 23. The interconnect structure of claim 21, whereinsaid first portion is a conductive line.
 24. The interconnect structureof claim 21, wherein the thin layer is a metallic layer.
 25. Theinterconnect structure of claim 24, wherein said metallic layer isselected from the group consisting of TaN, Ta, Co and W, Ti and TiN. 26.The interconnect structure of claim 21, wherein said thin layer is alow-k dielectric material.
 27. The interconnect structure of claim 22,wherein said thin layer is selected from a group consisting of SixNy,SiCx, SiCxNyHz, NbloK, PECVD, Al2O3, Flowable Oxide, TEOS, andPolyimide.
 28. A method of fabricating an interconnect structure,comprising: forming a capped interconnect element on an insulatinglayer; forming a first dielectric layer on said capped interconnectelement; forming a thin barrier layer over said first dielectric layer;forming a second dielectric layer on said thin barrier layer; forming avia opening on said second dielectric layer and said thin barrier layer;forming a line trench on a portion of said second dielectric layer,wherein said via opening extends into a portion of said first dielectriclayer; and filling said via opening and said line trench with aconductive material for forming a contact via and a contact line.wherein a portion of said contact via is partially embedded in a portionof said interconnect element and further wherein said thin barrier layerseparates said first dielectric from said contact line.
 29. The methodof fabricating the interconnect structure of claim 28, wherein saidinterconnect element includes a material selected from a groupconsisting of Cu, Al, W and alloys thereof.
 30. The method offabricating the interconnect structure of claim 28, wherein saidconductive material is Cu.
 31. The method of fabricating theinterconnect structure of claim 28, wherein the thin barrier layer is ametallic layer.
 32. The method of fabricating the interconnect structureof claim 31, wherein said metallic layer is selected from the groupconsisting of TaN, Ta, Co and W, Ti and TiN.
 33. The method offabricating the interconnect structure of claim 28, wherein said thinbarrier layer is a low-k dielectric material.
 34. The method offabricating the interconnect structure of claim 28, wherein said thinbarrier layer is selected from a group consisting of SixNy, SiCx,SiCxNyHz, NbloK, PECVD, Al2O3, Flowable Oxide, TEOS, and Polyimide. 35.The method of fabricating the interconnect structure of claim 28,wherein said first dielectric layer and said second dielectric layer areultra low-k dielectrics.
 36. A method of forming an interconnectstructure, the method comprising: forming a first ultra low-k dielectricof via height thickness on top of an underlying interconnect layer;forming an ultra thin film on said first ultra low-k dielectric layer;forming a second ultra low-k dielectric of line level thickness on saidultra thin film; etching a via through said second ultra low-kdielectric, said ultra thin film and substantially through said firstultra low-k dielectric; etching a line trench in a portion of saidsecond ultra low-k dielectric, wherein said via is etched through saidinterconnect layer; and depositing a metal for defining an interconnectlevel.
 37. The method of forming the interconnect structure of claim 36,wherein said interconnect layer includes a Cu containing material. 38.The method of forming the interconnect structure of claim 36, whereinthe ultra thin film is a metallic layer.
 39. The method of forming theinterconnect structure of claim 38, wherein said metallic layer isselected from the group consisting of TaN, Ta, Co and W, Ti and TiN. 40.The method of forming the interconnect structure of claim 36, whereinsaid ultra thin film is a low-k dielectric material.
 41. The method offorming the interconnect structure of claim 36, wherein said ultra thinfilm is selected from a group consisting of SixNy, SiCx, SiCxNyHz,NbloK, PECVD, Al2O3, Flowable Oxide, TEOS, and Polyimide.
 42. The methodof forming the interconnect structure of claim 36, wherein saidinterconnect level includes a contact via and a contact line.
 43. Themethod of forming the interconnect structure of claim 42, wherein saidcontact via is partially embedded in a portion of said interconnectlayer and wherein said ultra thin firm is formed between a surface ofsaid contact line and said first ultra low-k dielectric.